Job Responsibilities: • Define and drive next-generation SRAM and ROM architectures for embedded and standalone memory products. • Own memory roadmap development, architectural trade-off analysis, and technology strategy across multiple product lines. • Lead optimization of performance, power, area (PPA), yield, and reliability targets. • Architect memory arrays, peripheral circuits, redundancy schemes, ECC, power-management features, and test methodologies. • Collaborate with circuit design, layout, verification, product, and process technology teams from concept through silicon validation and production. • Drive innovation in low-voltage operation, high-speed access, low-power techniques, and memory reliability. • Develop architectural models for memory performance, power consumption, area, and yield prediction. • Lead root-cause analysis of silicon issues and define architectural improvements for future generations. • Mentor engineers and provide technical leadership across cross-functional teams. • Influence long-term memory technology roadmaps and IP strategy. Special Plus – In-Memory Computing (IMC) • Architect SRAM/ROM-based In-Memory Computing (IMC) solutions for AI/ML acceleration and edge-computing applications. • Evaluate and develop digital, analog, and mixed-signal IMC architectures. • Define compute-enabled memory macros supporting Vector-Matrix Multiplication (VMM) and Multiply-Accumulate (MAC) operations. • Optimize energy efficiency, throughput, accuracy, and scalability for memory-centric AI workloads. • Drive innovations involving ADC/DAC integration, quantization, calibration, and variation-tolerant compute architectures. • Collaborate with AI accelerator, system architecture, and algorithm teams to enable next-generation intelligent computing solutions. Education • Bachelor’s Degree (B.E./B.Tech.) in Electrical Engineering, Electronics Engineering, Electronics & Communication Engineering, or a closely related discipline. • Master’s Degree (M.Tech./M.S.) in VLSI Design, Microelectronics, Semiconductor Technology, Integrated Circuit Design, or related specialization preferred. • Ph.D. in VLSI, Memory Design, Computer Engineering, or related field is a plus. Experience & Skills • 10+ years of experience in SRAM, ROM, embedded memory, custom memory, or memory compiler development. • Deep expertise in memory architecture, bitcell and peripheral circuit design, redundancy, ECC, memory compilers, and advanced CMOS technologies. • Strong understanding of memory characterization, silicon validation, reliability, and yield optimization. • Proven track record of technical leadership, innovation, patent generation, and successful silicon delivery. • Experience in AI hardware, In-Memory Computing (IMC), or memory-centric computing architectures is highly desirable. More information about NXP in India... #LI-7013