Within the BAE Systems MMIC and Foundry Capabilities group, based in Nashua, NH, we design and fabricate high performance GaN and GaAs microwave and millimeter-wave ICs for the Space and Defense markets. We are looking for a mid-level semiconductor device characterization engineer to contribute to the development of our GaN and GaAs fabrication processes and the modeling of transistors at the heart of our GaN and GaAs ICs. Job responsibilities will include the following: • Set up wafer probers and test equipment to characterize transistors and related semiconductor devices for state-of-the-art GaN and GaAs process technologies • Calibrate test systems and execute test plans for a wide range of high-frequency on-wafer measurements over temperature including static and pulsed current-voltage, CW and pulsed S-Parameter, load- and source-pull, noise parameter, and intermodulation/mixer measurements • Provide validated test data files for device compact modeling activities and summaries of validated test data for process development activities • Contribute to the development of test structures and test chips for device and technology characterization, modeling, and validation • Work with our process development team to support the development and production release of next generation GaN and GaAs processes • Work with our device modeling team to support development of predictive compact simulation models that accurately account for geometric, bias, temperature, and statistical variation from DC to W-band