Job Details: Job Location: Torrance, CA - Torrance, CA, Position Type: Full Time, Salary Range: $110000.00 - $160000.00Salary/year, Role Overview  Navitas Semiconductor is seeking an experienced Staff Product Engineer to lead product engineering activities for GaN power semiconductor devices, from early silicon and new product introduction (NPI) through qualification, production ramp, and sustaining engineering.  This role connects device physics, electrical characterization, manufacturing processes, reliability, and power electronics. The successful candidate will take technical ownership of product readiness—including device performance, CP/FT test strategy, yield, parametric variation, datasheet validation, and qualification risk—and drive cross-functional resolution of complex issues.   Key Responsibilities  Product Engineering – NPI, Production Ramp & Sustaining  Own product engineering readiness from initial silicon evaluation through qualification, production release, and high-volume manufacturing.  Drive electrical characterization, datasheet validation, test limit and guardband development, process window definition, and qualification readiness.  Analyze wafer probe (CP) and final test (FT) results, including yield trends, parametric distributions, correlations, and manufacturing variation.  Lead yield improvement and root-cause investigations using statistical analysis, design of experiments (DOE), and cross-functional technical reviews.  Resolve sustaining issues involving yield excursions, parametric drift, electrical failures, reliability concerns, and failure analysis; coordinate corrective actions.  Work directly with wafer fabs, OSATs, and Test Engineering on manufacturing process control, test correlation, product changes, and production ramp risks.  Device Physics & Electrical Characterization  Plan and perform electrical characterization, including breakdown voltage, leakage, threshold voltage, on-resistance, dynamic RDS(on), and switching behavior.  Correlate device performance with device structure, process variation, trapping effects, and reliability mechanisms; translate findings into actionable recommendations.  Support development, evaluation, and manufacturing qualification of 100 V and 650 V GaN devices and integrated power technologies.  Contribute technical assessments of product margins, degradation mechanisms, and reliability data to qualification and production release decisions.  Power Electronics & Applications Interface  Support device-level and application-representative characterization, including double-pulse testing, switching losses, dynamic RDS(on), and gate-drive behavior.  Collaborate with Applications Engineering on characterization fixtures and evaluation platforms; understand effects of parasitics, ringing, dv/dt, and thermal conditions.  Correlate system-level switching results with semiconductor device behavior and provide feedback to Device, Process, and Test Engineering.  Cross-Functional Technical Leadership  Lead complex technical investigations and present clear data-driven recommendations, product risks, and release-readiness assessments.  Partner with Device Engineering, Process Integration, Reliability, Quality, Test, Applications, wafer fabs, and OSAT partners to resolve product issues.  Provide technical guidance to engineering teams and support customer-facing investigations during qualification and production ramp.  Qualifications: Required Qualifications  BS or MS in Electrical Engineering, Semiconductor Physics, Power Electronics, or a related discipline.  8+ years of relevant semiconductor product engineering experience, or equivalent demonstrated technical expertise.  Proven experience with NPI, product qualification, production ramp, and sustaining engineering for semiconductor devices.  Strong understanding of power semiconductor device physics, electrical characterization, manufacturing variation, and reliability mechanisms.  Experience analyzing CP/FT data, parametric distributions, yield trends, and test limits using statistical and problem-solving methods.  Hands-on laboratory capability in electrical characterization of power devices, with demonstrated independent technical leadership and cross-functional communication.  Preferred Qualifications  Direct experience with GaN HEMTs, SiC MOSFETs, or comparable power semiconductor technologies.  Familiarity with dynamic RDS(on), double-pulse testing, switching loss measurements, and gate-drive effects.  Experience working with wafer fabrication, assembly/packaging, OSAT, and outsourced test partners.  Background in failure analysis, accelerated reliability testing, or semiconductor degradation physics.  Experience with DOE, statistical process control, and engineering data-analysis tools (e.g., JMP, Minitab, Python, or equivalent).  The salary range for this role is $110,000–$160,000. Final compensation will depend on the candidate’s experience, skills, and work location.